2SH11
Key Features
- High speed switching
- ic(peak) PC* Tj IC VGES
- Unit Test conditions V IC = 100 µA, VGE = 0 VCE = 600 V, VGE = 0 VGE = ±20 V, VCE = 0
- 2.0 ±1 5.0 - µA V V
- Switching time
- Part: 2SH11
- Description: Silicon N-Channel IGBT
- Manufacturer: Hitachi Semiconductor
- Size: 41.32 KB