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2SH11 - Silicon N-Channel IGBT

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Description

ge without notice.

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3.

Features

  • 2.
  • High speed switching.
  • Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 10 20 50 150.
  • 55 to +150 Unit V V A A W °C °C.

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Datasheet Details

Part number 2SH11
Manufacturer Hitachi Semiconductor
File Size 41.32 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet 2SH11 Datasheet
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Full PDF Text Transcription

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ADE–208–274 (Z) 2SH11 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO–220AB High speed power switching Features 2 • High speed switching • Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3.
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