* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA)
* 4 V gate drive device. Outline SPAK D 3 12 .

Silicon P Channel MOS FET High Speed Switching

2SJ580

2SJ583LS

2SJ584LS

2SJ585LS

2SJ586

2SJ587

2SJ589LS

2SJ50

2SJ501

2SJ502

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