* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA)
* 4 V gate drive device.
Outline
SPAK
D 3
12 .
Silicon P Channel MOS FET High Speed Switching
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