2SK2216
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
Pch*1
Tch
Tstg
Ratings
60
±10
20
150
150
–55 to +150
Unit
V
V
A
W
°C
°C
Electrical Characteristics (TC = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Drain leakage current*1
IDSS — — 1
mA VDS = 60 V, VGS = 0
Gate leakage current*1
IGSS — — ± 3 µA VGS = ± 10 V, VDS = 0
Gate to source cutoff voltage*1 VGS(off) 0.3
—
1.6 V
VDS = 10 V, ID = 1 mA
Drain to source voltage*1
VDS(on)
—
1.2 2.5 V
VGS = 10 V, ID = 5 A*2
Forward transfer admittance*1 |yfs|
3.0 4.0 —
S
VDS = 10 V, ID = 5 A*2
Input capacitance*1
Ciss — 250 — pF VGS = 5 V, VDS = 0
f = 1MHz
Output capacitance*1
Coss — 85 — pF VDS = 10V, VGS = 0
f = 1MHz
Output power
Drain efficiency
POUT
ηD
100 140 —
— 55 —
W
%
VDS = 28 V, IDO = 0.4 A
f = 860 MHz, Pin = 15 W
Notes: 1. Shows / unit FET
2. Pulse Test
2
