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2SK2216 - Silicon N-Channel MOS FET

Key Features

  • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz).
  • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch.
  • Tch Tstg 1 Ratings 60 ±10 20 150 150.
  • 55 to +150 Unit V V A W °C °C Electrical Cha.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2212 Silicon N-Channel MOS FET
2SK2202 Silicon N-Channel MOS FET
2SK2203 Silicon N-Channel MOS FET
2SK2220 Silicon N-Channel MOSFET
2SK2221 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 60 ±10 20 150 150 –55 to +150 Unit V V A W °C °C Electrical Characteristics (TC = 25°C) Item Drain leakage current* 1 1 1 Symbol Min I DSS I GSS VGS(off) VDS(on) |yfs| Ciss Coss POUT ηD 1 Typ — — — 1.2 4.0 250 85 140 55 Max 1 ±3 1.6 2.