* High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz)
* Compact package Suitable for push - pull circuit Outline .

based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other .

Silicon N-Channel MOS FET

2SK2210

2SK2211

2SK2212

2SK2213-01L

2SK2213-01S

2SK2215-01L

2SK2215-01S

2SK2218

2SK2219

2SK2200

2SK2201

2SK2202

2SK2203

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts