RDS(ON) < 0.6Ω (VGS = 10V)
G
D S
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate 2.Drain 3.Source.
Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VDS VGS ID IDM PD TJ Tstg
Rating 30
±20 1 2 1
150 -55 to 150.
Electrical Characteristics Ta = 25℃
Parameter
Symbol.
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SMD Type
N-Channel MOSFET 2SK2211
MOSFET
■ Features
● VDS (V) = 30V ● ID = 1A ● RDS(ON) < 0.75Ω (VGS = 4V) ● RDS(ON) < 0.6Ω (VGS = 10V)
G
D S
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate 2.Drain 3.