2SK2211 Datasheet | Kexin Semiconductor

Features - VDS (V) = 30V - ID = 1A - RDS(ON) ＜ 0.75Ω (VGS = 4V) - RDS(ON) ＜ 0.6Ω (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD TJ Tstg Rating 30 ±20 1 2 1 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=100μA, VGS=0V Gate to Source voltage VGSS IGS=100μA, VDS=0V Zero Gate Voltage Drain Current IDSS VDS=25V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±15V Gate threshold voltage VGS(th) VDS=5V ID=1m A Static Drain-Source On-Resistance RDS(On) VGS=4V, ID=0.5A VGS=10V, ID=0.5A Forward Transconductance g FS VDS=10V, ID=0.5 A Input Capacitance Ciss Output Capacitance Coss VGS=0V, VDS=10V, f=1MHz Reverse Transfer...