2SK2211 - Silicon N-Channel MOS FET

Panasonic

Key Features

0.4 max. 1 2SK2211 ID  VDS 3.0 Ta = 25°C 2.5 2.5 3.0 Silicon MOS FETs (Small Signal) ID  VDS 1.6 RDS  VDS Drain to source ON-resistance RDS(ON) (Ω) VDS =10 V Ta = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID = 0.5 A Ta = 25°C Drain current ID (A) 2.0 Drain current ID (A) VGS = 3.5 V 2.0 1.5 3.0 V 1.0 2.5 V 0.5 2.0 V 0 0 2 4 6 8 10 12 1.5 1.0 0.5 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) RDS.

2SK2211 silicon n-channel mos fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK2211
Manufacturer	Panasonic
File Size	33.22 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2211 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 45˚ 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0+0.25 –0.20 0.4±0.