2SK3001 - GaAs HEMT Low Noise Amplifier

Name: 2SK3001
SKU: 2SK3001-627492

Hitachi Semiconductor

The 2SK3001 by Hitachi Semiconductor is a GaAs HEMT Low Noise Amplifier. Below is the official datasheet preview.

Datasheet Details

Part number	2SK3001
Manufacturer	Hitachi Semiconductor
File Size	145.04 KB
Description	GaAs HEMT Low Noise Amplifier
Datasheet	2SK3001_HitachiSemiconductor.pdf
Additional preview pages of the 2SK3001 datasheet.

Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz).
High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz).
Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor.

📁 2SK3001 Similar Datasheet

2SK300 - N-Channel Silicon MOSFET (Sony Corporation)
2SK3003 - MOSFET (Sanken)
2SK3004 - MOSFET (ETC)
2SK3009 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
2SK301 - N-Channel MOSFET (Panasonic Semiconductor)
2SK3012 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
2SK3013 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
2SK3017 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

Other Datasheets by Hitachi Semiconductor

Published: Nov 9, 2008 |