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2SK3001 - GaAs HEMT Low Noise Amplifier

Key Features

  • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz).
  • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz).
  • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be thrown out with general industrial or domestic wastes.