• Part: 2SK3001
  • Description: GaAs HEMT Low Noise Amplifier
  • Manufacturer: Hitachi Semiconductor
  • Size: 145.04 KB
2SK3001 Datasheet (PDF) Download
Hitachi Semiconductor
2SK3001

Key Features

  • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)
  • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)
  • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be thrown out with general industrial or domestic wastes. 2SK3001