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3SK290 Datasheet - Hitachi Semiconductor

Silicon N-Channel Dual Gate MOS FET

3SK290 Features

* Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz

* High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK

* 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage

3SK290 Datasheet (90.76 KB)

Preview of 3SK290 PDF

Datasheet Details

Part number:

3SK290

Manufacturer:

Hitachi Semiconductor

File Size:

90.76 KB

Description:

Silicon n-channel dual gate mos fet.

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3SK290 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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