Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance
- RDS(on) = 3.8 mΩ typ.
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
ADE-208-1570A(Z)
2nd. Edition Aug. 2002
1. Gate 2. Drain 3....
