H7N0308AB Description
H7N0308AB Silicon N Channel MOS FET High Speed Power Switching.
H7N0308AB Key Features
- Low on-resistance RDS (on) = 3.8 mΩ typ
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
- Part: H7N0308AB
- Manufacturer: Renesas (official site)
- Size: 71.13 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
H7N0308CF | Silicon N-Channel MOSFET |
Hitachi Semiconductor |
H7N0308CF | Silicon N-Channel MOSFET |