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H7N0308CF
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 3.8 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM)
D
G
123
S
REJ03G1123-0300 (Previous: ADE-208-1570A)
Rev.3.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.3.00 Sep 07, 2005 page 1 of 3
H7N0308CF
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
H7N0308CF Datasheet
