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Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT2045T Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

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HAT2045T pdf
HAT2045T
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
Target Specification
5th. Edition
February 1999
TSSOP–8
1
D
87 6 5
8 123 4
D
45
GG
SS
23
MOS1
SS
67
MOS2
1, 8
2, 3, 6, 7
4, 5
D
Sou
G


Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT2045T Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT2045T pdf
HAT2045T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
28
±12
6.0
48
6.0
1.0
V
V
A
A
A
W
Channel dissipation
Pch Note3
1.5
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW 10µs, duty cycle 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
2


Part Number HAT2045T
Description Silicon N Channel Power MOS FET High Speed Power Switching
Maker Hitachi Semiconductor
Total Page 5 Pages
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