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HE8807SG - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes

Download the HE8807SG datasheet PDF. This datasheet also covers the HE8807FL variant, as both devices belong to the same (he8807fl/sg) gaalas infrared emitting diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.

Features

  • High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3.
  • 20 to +85.
  • 40 to +100 Units mA V °C °C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output po.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE8807FL_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HE8807FL (HE8807FL/SG) GaAlAs Infrared Emitting Diodes
HE8812SG GaAlAs Infrared Emitting Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
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