HE8812SG
HE8812SG is GaAlAs Infrared Emitting Diode manufactured by Hitachi Semiconductor.
Description
The HE8812SG is a Ga Al As double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
- High efficiency and high output power
Package Type
- HE8812: SG1 Internal Circuit
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3
- 20 to +60
- 40 to +90 Unit m A V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 40 840
- -
- -
- - Typ
- 870 50
- - 30 10 10 Max
- 900 60 2.5 100
- -
- Unit m W nm nm V µA p F ns ns Test Conditions IF = 200 m A IF = 200 m A IF = 200 m A IF = 200 m A VR = 3 V VR = 0 V, f = 1 MHz IF = 50 m A IF = 50 m A
Rev.1, Jan. 2003, page 2 of 6
Typical Characteristic Curves
Optical Output Power vs. Forward Current
Optical output power, PO (m W)
Forward Current vs. Forward Voltage 250
Forward current, IF (m A)
60 50 40 30 20 10 0 0 50 100 150 200 250
TC =
- 20°C 0°C 25°C 40°C 60°C
200 150
TC =
- 20°C
100 50
25°C 60°C
Forward current, IF (m A)
0.5 1.0 1.5 2.0 Forward voltage, VF...
