HE8812SG - GaAlAs Infrared Emitting Diode

Description

The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.

It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Features

High efficiency and high output power Package Type.
HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
20 to +60.
40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol.

Hitachi Semiconductor

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Datasheet Details

Part number	HE8812SG
Manufacturer	Hitachi Semiconductor
File Size	168.39 KB
Description	GaAlAs Infrared Emitting Diode
Datasheet	HE8812SG Datasheet
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www.DataSheet4U.com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Published: Dec 30, 2006 |