HE8812SG - GaAlAs Infrared Emitting Diode

Product Overview

Hitachi Semiconductor

Part number	HE8812SG
Manufacturer	Hitachi Semiconductor
File Size	168.39 KB
Description	GaAlAs Infrared Emitting Diode
Datasheet	HE8812SG Datasheet
Additional preview pages of the HE8812SG datasheet.

The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.

High efficiency and high output power Package Type.
HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
20 to +60.
40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol.

📁 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Dec 30, 2006 |