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HE8812SG Datasheet

Gaalas Infrared Emitting Diode

Manufacturer: Hitachi Semiconductor (now Renesas)

HE8812SG Overview

The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

HE8812SG Key Features

  • High efficiency and high output power
  • HE8812: SG1 Internal Circuit

HE8812SG Distributor