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HE8807SG - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes

Product Overview

Hitachi Semiconductor

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HE8807SG (HE8807FL/SG) GaAlAs Infrared Emitting Diodes by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – HE8807SG

Datasheet Details

Part number	HE8807SG
Manufacturer	Hitachi Semiconductor
File Size	53.13 KB
Description	(HE8807FL/SG) GaAlAs Infrared Emitting Diodes
Datasheet	HE8807SG Datasheet
Note	This datasheet PDF includes multiple part numbers: HE8807SG, HE8807FL. Please refer to the document for exact specifications by model.
Additional preview pages of the HE8807SG datasheet.

Product details

Description

The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.

Features

High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3.
20 to +85.
40 to +100 Units mA V °C °C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output po.

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Other Datasheets by Hitachi Semiconductor

HE8807FL - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes
HE8812SG - GaAlAs Infrared Emitting Diode

Published: Dec 30, 2006 |