HE8807FL Datasheet | Hitachi Semiconductor

Description The HE8807SG/FL are single heterojunction structure Ga Al As light emitting diodes with a wavelength of 880 nm. Features - - - - - High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3 - 20 to +85 - 40 to +100 Units m A V °C °C HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output power HE8807SG HE8807FL Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Note: Symbol PO PF- λp ∆λ VF IR Ct tr tf Min 10 0.5 800 - - - - - - Typ 20 1.0 880 30 1.7 - 10 20 20 Max - - 900 - 2.3 100 - - - Units m W Test Conditions I F = 150 m A I F = 20 m A nm nm V µA p F ns ns I F = 150 m A I F = 150 m A I F = 150 m A VR = 3 V VR = 0 V, f = 1 MHz I F = 50 m A I F = 50 m A 1. PF specification: The optical output within 9 degrees of the acceptance angle. Typical Characteristic Curves HE8807SG/FL Typical Characteristic Curves (cont) HE8807SG/FL Typical Characteristic Curves (cont) HE8807SG/FL Typical Characteristic Curves...