gaalas infrared emitting diode.
* High efficiency and high output power
Package Type
* HE8812: SG1 Internal Circuit
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HE8812SG
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Rever.
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
* High efficiency and high output power
Pack.
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