Datasheet Details
| Part number | HE8812SG |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 168.39 KB |
| Description | GaAlAs Infrared Emitting Diode |
| Datasheet |
 HE8812SG Datasheet
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Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.
It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
- High efficiency and high output power Package Type.
- HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
- 20 to +60.
- 40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol.