• Part: HE8812SG
  • Description: GaAlAs Infrared Emitting Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 168.39 KB
Download HE8812SG Datasheet PDF
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Datasheet Summary

.. GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features - High efficiency and high output power Package Type - HE8812: SG1 Internal...