• Part: HM62W8512B
  • Description: 4 M SRAM (512-kword x 8-bit)
  • Manufacturer: Hitachi Semiconductor
  • Size: 81.00 KB
HM62W8512B Datasheet (PDF) Download
Hitachi Semiconductor
HM62W8512B

Key Features

  • Single 3.3 V supply: 3.3 V ± 0.3 V
  • Access time: 55/70 ns (max)
  • Power dissipation  Active: 16.5 mW/MHz (typ)  Standby: 3.3 µW (typ)
  • Completely static memory. No clock or timing strobe required
  • Equal access and cycle times
  • Common data input and output: Three state output
  • Directly LV-TTL compatible: All inputs and outputs
  • Battery backup operation