HM62W8511H - 4M High Speed SRAM (512-kword x 8-bit)

Product Overview

Hitachi Semiconductor

Datasheet Details

Part number	HM62W8511H
Manufacturer	Hitachi Semiconductor
File Size	74.74 KB
Description	4M High Speed SRAM (512-kword x 8-bit)
Datasheet	HM62W8511H Datasheet
Additional preview pages of the HM62W8511H datasheet.

HM62W8511H Product details

Description

The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

Features

Single supply : 3.3 V ± 0.3 V.
Access time 12/15 ns (max).
Completely static memory  No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible  All inputs and outputs.
Operating current : 150/130 mA (max).
TTL standby current : 60/50 mA (max).
CMOS standby current : 5 mA (max) : 1 mA (max) (L-version).
Data retension current : 0.6 mA (max) (L-version).
Data retension volta.

📁 Similar Datasheet

HM6203 - High Input Voltage LDO Linear Regulators (H&M semi)
HM6207 - ultra sensitive hall effect switch (H&M semi)
HM6207H - 256K High Speed SRAM (Hitachi)
HM6208 - 4 Bit CMOS Static RAM (Hitachi)
HM621100A - 1048576 word / 1 Bit High Speed CMOS Static RAM (Hitachi)
HM6215 - Fast Transient Response LDO (H&M Semiconductor)
HM6216 - positive voltage regulators (H&M semi)
HM6216514I - 8M SRAM (Renesas)
HM6221 - High PSRR LDO (H&M Semiconductor)
HM62256 - 32768 word x 8-Bit High Speed CMOS Static RAM (Hitachi)

Other Datasheets by Hitachi Semiconductor

HM62W8511HC - 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HI - 4M High Speed SRAM (512-kword x 8-bit)
HM62W8512B - 4 M SRAM (512-kword x 8-bit)
HM62W8512BI - 4 M SRAM (512-kword x 8-bit)
HM62W1400H - 4M High Speed SRAM
HM62W16255H - 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HC - 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HI - 4M High Speed SRAM (256-kword x 16-bit)

Published: Mar 26, 2005 |