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HM62W8512BI Datasheet

Manufacturer: Hitachi Semiconductor (now Renesas)
HM62W8512BI datasheet preview

Datasheet Details

Part number HM62W8512BI
Datasheet HM62W8512BI_HitachiSemiconductor.pdf
File Size 58.84 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 4 M SRAM (512-kword x 8-bit)
HM62W8512BI page 2 HM62W8512BI page 3

HM62W8512BI Overview

The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation;.

HM62W8512BI Key Features

  • Single 3.3 V supply: 3.3 V ± 0.3V
  • Access time: 70/85 ns (max)
  • Power dissipation  Active: 16.5 mW/MHz (typ)  Standby: 3.3 µW (typ)
  • pletely static memory. No clock or timing strobe required
  • Equal access and cycle times
  • mon data input and output: Three state output
  • Directly LV-TTL patible: All inputs and outputs
  • Battery backup operation
  • Operating temperature: -40 to +85˚C
  • Read cycle Write cycle (1) Write cycle (2)
Hitachi Semiconductor (now Renesas) logo - Manufacturer

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HM62W8512BI Distributor

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