• Part: HM62W8512BI
  • Description: 4 M SRAM (512-kword x 8-bit)
  • Manufacturer: Hitachi Semiconductor
  • Size: 58.84 KB
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Hitachi Semiconductor
HM62W8512BI
HM62W8512BI is 4 M SRAM (512-kword x 8-bit) manufactured by Hitachi Semiconductor.
Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II. Features - Single 3.3 V supply: 3.3 V ± 0.3V - Access time: 70/85 ns (max) - Power dissipation  Active: 16.5 m W/MHz (typ)  Standby: 3.3 µW (typ) - pletely static memory. No clock or timing strobe required - Equal access and cycle times - mon data input and output: Three state output - Directly LV-TTL patible: All inputs and outputs - Battery backup operation - Operating temperature: - 40 to +85˚C Ordering Information Type No. HM62W8512BLTTI-7 HM62W8512BLTTI-8 Access time 70 ns 85 ns Package 400-mil 32-pin plastic TSOP II (TTP-32D) HM62W8512BI Series Pin Arrangement 32-pin TSOPII (Normal Type TSOP) A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 Pin Description Pin name A0 to A18 I/O0 to I/O7 CS OE WE VCC VSS Function Address input Data input/output Chip select Output enable Write enable Power supply Ground HM62W8512BI Series Block Diagram V CC V SS - - - - - A18 A16 A1 A0 A2 A12 A14 A3 A7 A6 Row Decoder Memory Matrix 1,024 × 4,096 I/O0 Input Data Control I/O7 - - Column I/O Column Decoder - - A10 A4 A5 A13 A17A15A8 A9 A11 - - CS WE OE Timing Pulse Generator Read/Write...