Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1316. For precise diagrams, and layout, please refer to the original PDF.
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No...
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es • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
More Datasheets from Hitachi Semiconductor (now Renesas)
K1316 Datasheet
