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K1336 - Silicon N-Channel MOS FET

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperatur.

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Datasheet preview – K1336

Datasheet Details

Part number K1336
Manufacturer Hitachi Semiconductor
File Size 40.25 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet K1336 Datasheet
Additional preview pages of the K1336 datasheet.

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Full PDF Text Transcription

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2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch Tch Tstg Ratings 60 ±20 0.3 1.2 0.
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