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K2554 Datasheet 2SK2554

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview

2SK2554 Silicon N-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance.
  • RDS(on) = 4.5 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.