K2586 - 2SK2586

Datasheet Summary

Features

Low on-resistance.
RDS(on) = 7 m typ.
High speed switching.
4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage te.

Hitachi Semiconductor

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Datasheet Details

Part number	K2586
Manufacturer	Hitachi Semiconductor
File Size	33.17 KB
Description	2SK2586
Datasheet	K2586 Datasheet
Additional preview pages of the K2586 datasheet.

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Full PDF Text Transcription

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2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.

Published: Feb 19, 2016 |