K2586 Datasheet | Hitachi Semiconductor

Features - Low on-resistance - RDS(on) = 7 m typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID- 2 I - 1 D(pulse) I DR- 2 I AP - 3 EAR- 3 Pch- 2 Tch Tstg Ratings 60 ±20 60 240 60 45 174 125 150 - 55 to +150 Unit V V A A A A m J W °C °C 2SK2586 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage...