K2554 Datasheet | Hitachi Semiconductor

Features - Low on-resistance - RDS(on) = 4.5 mΩ typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I - 1 D(pulse) I DR- 2 I AP - 3 EAR- 3 Pch- 2 Tch Tstg Ratings 60 ±20 75 300 75 50 214 150 150 - 55 to +150 Unit V V A A A A m J W °C °C 2SK2554 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage...