K2554 - 2SK2554

Datasheet Summary

Features

Low on-resistance.
RDS(on) = 4.5 mΩ typ.
High speed switching.
4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.

Hitachi Semiconductor

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Datasheet Details

Part number	K2554
Manufacturer	Hitachi Semiconductor
File Size	50.39 KB
Description	2SK2554
Datasheet	K2554 Datasheet
Additional preview pages of the K2554 datasheet.

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Full PDF Text Transcription

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2SK2554 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.

Published: Jul 8, 2015 |