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K2586 - 2SK2586

Key Features

  • Low on-resistance.
  • RDS(on) = 7 m typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage te.

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More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
K2554 2SK2554
K2568 2SK2568
K2590 Silicon N-Channel MOSFET

Full PDF Text Transcription for K2586 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2586. For precise diagrams, tables, and layout, please refer to the original PDF.

2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device ...

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e • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.