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K2926 Datasheet 2sk2926

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power.

Key Features

  • Low on-resistance RDS(on) = 0.042Ω typ.
  • 4V gate drive devices.
  • High speed switching Outline DPAK.
  • 2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temper.

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