K2930 Overview
2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th.
K2930 Key Features
- Low on-resistance R DS =0.020 Ω typ
- High speed switching
- 4V gate drive device can be driven from 5V source
K2930 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | K2930 |
|---|---|
| Datasheet | K2930-HitachiSemiconductor.pdf |
| File Size | 51.96 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | 2SK2930 |
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2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th.
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| K2936 | 2SK2936 |
| K2938 | 2SK2938 |
| K2926 | 2SK2926 |
| K2929 | 2SK2929 |
| K2958 | 2SK2958 |
| K2959 | Silicon N Channel MOS FET |