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Hitachi Power Semiconductor Device Electronic Components Datasheet

K2930 Datasheet

2SK2930

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2SK2930
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS =0.020 typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-553C (Z)
4th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source


Hitachi Power Semiconductor Device Electronic Components Datasheet

K2930 Datasheet

2SK2930

No Preview Available !

2SK2930
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
35
140
35
35
105
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2


Part Number K2930
Description 2SK2930
Maker Hitachi Semiconductor
Total Page 10 Pages
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