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Hitachi Power Semiconductor Device Electronic Components Datasheet

K3150 Datasheet

Silicon N-Channel MOSFET

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2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET
High Speed Power Switching
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Features
Low on-resistance
RDS = 45 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
ADE-208-750A (Z)
2nd. Edition
February 1999
D1
2
3
G
1
2
3 1. Gate
2. Drain
3. Source
4. Drain
S


Hitachi Power Semiconductor Device Electronic Components Datasheet

K3150 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

2SK3150(L),2SK3150(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
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Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
100
±20
1.0
8.5
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
45
65
15
900
400
210
15
120
200
150
0.9
90
Ratings
100
±20
20
60
20
20
40
50
150
–55 to +150
Max Unit
—V
—V
±10 µA
10 µA
2.5 V
60 m
85 m
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4 V Note4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 10 A, VGS = 10 V
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/ dt = 50A/ µs
2


Part Number K3150
Description Silicon N-Channel MOSFET
Maker Hitachi Semiconductor
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K3150 Datasheet PDF






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