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K3150 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance R DS = 45 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. datasheet4u. com Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K3152 Silicon N-Channel MOSFET
K3155 Silicon N-Channel MOSFET
K3140 2SK3140
K3142 2SK3142
K3148 2SK3148

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching www.datasheet4u.com ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.datasheet4u.