CS150N03D8 Datasheet | Huajing

Description ： CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 30 150 120 104 1.9 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤2.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:482p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 30 150 96 600 ±20 1000 104 0.832 150，- 55 to 150 300 Units V A A A V m J W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 19V0 1 CS150N03 D8 ○R Electrical Characteristics（TJ= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V, ID=250µA VDS =30V, VGS= 0V, TJ = 25℃ VDS =24V, VGS= 0V, TJ = 125℃ VGS =+20V VGS =-20V Rating Min. Typ. Max. 30 -- --- -- 1 -- -- 100 -- -- 100 -- --...