BT15T120ANF - Silicon FS Planar IGBT

Huajing Microelectronics

General Description

Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Key Features

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability.

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BT15T120ANF silicon fs planar igbt by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	BT15T120ANF
Manufacturer	Huajing Microelectronics
File Size	556.77 KB
Description	Silicon FS Planar IGBT
Datasheet	BT15T120ANF Datasheet

Full PDF Text Transcription for BT15T120ANF (Reference)

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offe...

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and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot （TC=25℃） VCE(SAT) 1200 15 186 1.95 V A W V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).

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