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CS10N50A8R - Silicon N-Channel Power MOSFET

General Description

CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 10 130 0.5 l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:8.4pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS10N50A8R
Manufacturer Huajing Microelectronics
File Size 266.45 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10N50A8R Datasheet

Full PDF Text Transcription for CS10N50A8R (Reference)

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Silicon N-Channel Power MOSFET CS10N50 A8R ○R General Description： CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 10 130 0.5 l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:8.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adapto

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