Click to expand full text
Silicon N-Channel Power MOSFET
CS10N65 A8HD
○R
General Description：
CS10N65 A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS10N65A8HD Datasheet
