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CS10N70FA9D Datasheet, Huajing Microelectronics

CS10N70FA9D Datasheet, Huajing Microelectronics

CS10N70FA9D

datasheet Download (Size : 348.36KB)

CS10N70FA9D Datasheet

CS10N70FA9D mosfet equivalent, silicon n-channel power mosfet.

CS10N70FA9D

datasheet Download (Size : 348.36KB)

CS10N70FA9D Datasheet

Features and benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy T.

Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating .

Description

CS10N70F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 700 10 50 0.78 switching performance and enhance the avalanche ener.

Image gallery

CS10N70FA9D Page 1 CS10N70FA9D Page 2 CS10N70FA9D Page 3

TAGS

CS10N70FA9D
Silicon
N-Channel
Power
MOSFET
Huajing Microelectronics

Manufacturer


Huajing Microelectronics

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