CS13N50A8D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

switching performance and enhance the avalanche energy.

Key Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test.

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CS13N50A8D silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS13N50A8D
Manufacturer	Huajing Microelectronics
File Size	488.79 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS13N50A8D Datasheet

Full PDF Text Transcription for CS13N50A8D (Reference)

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Silicon N-Channel Power MOSFET CS13N50 A8D ○R General Description： CS13N50 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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