CS13N50A8R
Description
：
CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the Ro HS standard.
Features
： l Fast Switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 13 150 0.4 l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:40n C) l Low Reverse transfer capacitances(Typical:11p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current...
