silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche en.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS13N50F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various po.
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