l Fast Switching l Low ON Resistance(Rdson≤4.5mΩ) l Low Gate Charge (Typical Data:103.6nC) l Low Reverse transfer capacitances(Typical:170pF) l 100% Single Pulse avalanc.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS1404 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power.

CS140

CS140N08A0

CS140N08A8

CS140N08AR

CS14-E2GA392MYNS

CS142

CS1420

CS147

CS14N06AQ2-1

CS14N10A3

CS14N10A4

CS14N25A0R

CS14N25A4R