switching performance and enhance the avalanche energy.
Key Features
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test.
Full PDF Text Transcription for CS220N04A8H (Reference)
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Silicon N-Channel Power MOSFET CS220N04 A8H ○R General Description： CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...
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nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control
CS220N04A8H Datasheet
