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CS25N06B3 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS25N06B3 Features

* l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS25N06B3 General Description

CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 performance and enhance the avalanche energy. The transistor can be used in various power switchi.

CS25N06B3 Datasheet (708.02 KB)

Preview of CS25N06B3 PDF

Datasheet Details

Part number:

CS25N06B3

Manufacturer:

Huajing Microelectronics

File Size:

708.02 KB

Description:

Silicon n-channel power mosfet.

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CS25N06B3 Silicon N-Channel Power MOSFET Huajing Microelectronics

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