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CS2N60A7H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS2N60A7H
Manufacturer Huajing Microelectronics
File Size 333.67 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS2N60A7H Datasheet

Full PDF Text Transcription for CS2N60A7H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS2N60A7H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS2N60 A7H ○R General Description： VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned p...

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N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-126F, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of ad

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