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CS3710B8 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤23 mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3710B8
Manufacturer Huajing Microelectronics
File Size 846.36 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3710B8 Datasheet

Full PDF Text Transcription for CS3710B8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3710B8. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS3710 B8 General Description： CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology wh...

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hanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤23 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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