CS3N65A4H-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS3N65A4H-G
Manufacturer	Huajing Microelectronics
File Size	345.16 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N65A4H-G-HuajingMicroelectronics.pdf

CS3N65A4H-G Product details

Description

VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.9 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤3.5Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |