CS3N40A23 Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET ○R CS3N40 A23 General Description： VDSS CS3N40 A23, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃) W which reduce the conduction loss, improve switching RDS(ON)TYP Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche...