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Silicon N-Channel Power MOSFET
○R
CS3N40 A23
General Description：
VDSS
400
V
CS3N40 A23, the silicon N-channel Enhanced ID
2
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃)
2.5
W
which reduce the conduction loss, improve switching
RDS(ON)TYP
2.8
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOT-223, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of LCD Power and adaptor.
CS3N40A23 Datasheet
