Datasheet4U Logo Datasheet4U.com

CS3N50B3HY - Silicon N-Channel Power MOSFET

General Description

switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS3N50B3HY
Manufacturer Huajing Microelectronics
File Size 200.99 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N50B3HY Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS3N50A3R Silicon N-Channel Power MOSFET CR Micro
CS3N50A4R Silicon N-Channel Power MOSFET CR Micro
CS3N06AE-G Silicon N-Channel Power MOSFET CR Micro
CS3N06AS-G Silicon N-Channel Power MOSFET CR Micro
CS3N06AS1-G Silicon N-Channel Power MOSFET CR Micro

Other Datasheets by Huajing Microelectronics

Part Number Description
CS3N50B3 Silicon N-Channel Power MOSFET
CS3N50B4 Silicon N-Channel Power MOSFET
CS3N50B4HY Silicon N-Channel Power MOSFET
CS3N20ATH Silicon N-Channel Power MOSFET
CS3N40A23 Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET CS3N50 B3HY ○R General Description： VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.