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Silicon N-Channel Power MOSFET
CS3N50 B3HY
○R
General Description：
VDSS
500 V
CS3N50 B3HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
2.4 Ω
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-251, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS3N50B3HY Datasheet
