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Silicon N-Channel Power MOSFET
CS3N50 B4HY
○R
General Description：
VDSS
500 V
CS3N50 B4HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.4 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.
CS3N50B4HY Datasheet
