CS3N50B4HY datasheet by Huajing Microelectronics.
| Part number | CS3N50B4HY |
|---|---|
| Datasheet | CS3N50B4HY-HuajingMicroelectronics.pdf |
| File Size | 250.13 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the...
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS3N50B4 | Silicon N-Channel Power MOSFET |
| CS3N50B3 | Silicon N-Channel Power MOSFET |
| CS3N50B3HY | Silicon N-Channel Power MOSFET |
| CS3N20ATH | Silicon N-Channel Power MOSFET |
| CS3N40A23 | Silicon N-Channel Power MOSFET |
| CS3N40A3H | Silicon N-Channel Power MOSFET |
| CS3N40A4H | Silicon N-Channel Power MOSFET |
| CS3N60A3 | Silicon N-Channel Power MOSFET |
| CS3N65A4H-G | Silicon N-Channel Power MOSFET |
| CS3N70A3H-G | Silicon N-Channel Power MOSFET |
