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Silicon N-Channel Power MOSFET
○R
CS3N50 A4R
General Description：
CS3N50 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned Technology which
reduce the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords
with the RoHS standard.
Features：
Superior switching performance
Low on resistance(Rdson≤3Ω)
Low gate charge (Typical Data:8.8nC)
Low reverse transfer capacitances(Typical:2.6pF)
100% Single pulse avalanche energy test
Applications：
Power switch circuit of adaptor and charger.
CS3N50A4R Datasheet
