CS3N50A4R Overview
： CS3N50 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
CS3N50A4R Key Features
- Superior switching performance
- Low on resistance(Rdson≤3Ω)
- Low gate charge (Typical Data:8.8nC)
- Low reverse transfer capacitances(Typical:2.6pF)
- 100% Single pulse avalanche energy test