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Silicon N-Channel Power MOSFET
CS3N50 B4
○R
General Description：
VDSS
500 V
CS3N50 B4, the silicon N-channel Enhanced
ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)
2.5 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:9.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS3N50B4 Datasheet
