CS3N50B3 datasheet by Huajing Microelectronics.
| Part number | CS3N50B3 |
|---|---|
| Datasheet | CS3N50B3-HuajingDiscreteDevices.pdf |
| File Size | 195.48 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON) 2.5 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS...
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