CS3N50A3R Overview
Description
： CS3N50 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Superior switching performance
- Low on resistance(Rdson≤3Ω)
- Low gate charge (Typical Data:8.8nC)
- Low reverse transfer capacitances(Typical:2.6pF)
- 100% Single pulse avalanche energy test
